FQD2N60C Power MOSFET
The FQD2N60C is a switching MOSFET from Fairchild Semiconductor that features a high breakdown voltage optimized for primary side switching in DC-DC converters.
MOSFET
CoolMOS 600V High Voltage MOSFET from Infineon for Ultra-high Power Density Designs
Infineon Technology has broadened its CoolMOS portfolio with the PFD7 MOSFET series, which provides best-in-class-Performance and ease of usability. These devices are suitable for ultrahigh power
AO3404 N-Channel MOSFET
The AO3404 is a small signal TrenchFET MOSFET from Alpha and Omega Semiconductors. These MOSFETs are known for their low on-resistance and low gate charge.
SiR680ADP - 80V MOSFET with 2.35mΩ On-Resistance and Low Gate Charge for High Efficiency Applications
Vishay Intertechnology, Inc has introduced the Siliconix SiR680ADP, a new 80 V TrenchFET Gen IV N-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package. The
SCT3xxxxR – 4-Pin SiC MOSFETs with low switching loss
ROHM announced the availability of six (SCT3xxx xR series) new trench gate structure SiC MOSFETs (650V/ 1200V).
VIPer26K Converter Features High MOSFET Breakdown Voltage 1050V
The STMicroelectronics launched VIPer26K high-voltage converter comprises a 1050V avalanche-rugged N-channel power MOSFET that allow offline power supplies to combine a wide input-voltage range with the advantages of a simplified design.
STP80NF70 N-Channel MOSFET
The STP80NF70 is an N-channel Power MOSFET from ST Microelectronics. It has a drain to source voltage of 68V and a continuous collector current of 98A with low gate threshold voltage of 2-4V.
IRF830 N-Channel Power MOSFET
The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
IRFZ44N N-Channel Power MOSFET
The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.
MCX W: Bluetooth LE, Zigbee, and Matter over Thread multiprotocol MCUs
The ECX-1637B is a low-aging crystal. This component is ideal for wireless and IoT applications.
AlphaWire introduces the EcoCable Mini Cable: the smallest solution to your biggest cable problems
The ACS71240 is designed to replace shunt resistors in applications that require small size.
InnoSwitch™3-EP family of offline CV/CC QR flyback switcher ICs feature 900 V PowiGaN™ GaN switches.
FSP open frame power supply units with many form factor and power ratings
Highest magnetic sensitivity, lowest power consumption, smaller size compared to Hall, AMR, and GMR
Magnetic current sensors are a compelling alternative to traditional shunt-based solutions
