Alpha and Omega Semiconductor Limited has announced the release of 700V and 600V αMOS5 Super Junction MOSFET families as their latest generation of high voltage MOSFET.
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.
Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially fo
The FQD2N60C is a switching MOSFET from Fairchild Semiconductor that features a high breakdown voltage optimized for primary side switching in DC-DC converters.
Infineon Technology has broadened its CoolMOS portfolio with the PFD7 MOSFET series, which provides best-in-class-Performance and ease of usability. These devices are suitable for ultrahigh power
The AO3404 is a small signal TrenchFET MOSFET from Alpha and Omega Semiconductors. These MOSFETs are known for their low on-resistance and low gate charge.
Vishay Intertechnology, Inc has introduced the Siliconix SiR680ADP, a new 80 V TrenchFET Gen IV N-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package. The
SCT3xxxxR – 4-Pin SiC MOSFETs with low switching loss
The STMicroelectronics launched VIPer26K high-voltage converter comprises a 1050V avalanche-rugged N-channel power MOSFET that allow offline power supplies to combine a wide input-voltage range with the advantages of a simplified design.