High Current 900V and 1200V N-Channel SiC MOSFETs for Solar and Automotive Applications
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET. The new MOSFETs have a fast intrinsic diode with a low reverse recovery charge that delivers a significant reduction in power losses, boosts operating frequencies, and increases the power density of the overall solution.
The high-frequency operation of the devices is enhanced with the help of a small chip size, which leads to a lower device capacitance and reduced gate charge, this also reduced the switching losses when operating at high frequency. The low forward voltage of the devices provides threshold-free on-state characteristics that reduce the static losses that occur when the device is in conduction mode.
Features of The SiC N-Channel MOSFETs
- 900V devices are rated up to 118A
- 1200V devices are rated up to 103A
- Reduced gate charge of 220nC
- Faster switching frequency and enhanced reliability than silicon
- Improved efficiency and reduced EMI
- Higher surge ratings
- Improved avalanche capability
- Improved short circuit robustness
- Robust, highly reliable and longer lifetime
- Pb and Halide free
- AEC-Q100 Qualified and PPAP capable
Note: More technical details can be found in the NTBG020N090SC1 MOSFET Datasheet linked at the bottom of this page. Other Mosfets in this series can be found on the product page.
The new 900V and 1200V MOSFETs are designed especially for demanding high growth applications such as solar power inverters, onboard charging for electric vehicles (EV), Uninterruptible power supplies (UPS), server power supplies, and EV charging stations. For the applications that require high currents, the MOSFETs can be easily Operated in parallel due to their positive temperature coefficient/ temperature impedance. Both the family of devices is offered in industry-standard TO-247 or D2PAK package.