Skip to main content

SiR680ADP - 80V MOSFET with 2.35mΩ On-Resistance and Low Gate Charge for High Efficiency Applications

SiR680ADP MOSFET
Siliconix SiR680ADP MOSFET

Vishay Intertechnology, Inc has introduced the Siliconix SiR680ADP, a new 80 V TrenchFET Gen IV N-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.  The device was designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry. It offers the best in class on-resistance times gate charge of 129 mΩ*nC, a key figure of merit (FOM) for MOSFET’s used in power conversion applications.

 

Features of SiR680ADP MOSFET

  • On-Resistance: 2.35 mΩ at 10V, 3.5 mΩ at 7V
  • Input voltage 48V, output voltage 12V
  • Ultra-low gate charge of 55 nC and COSS of 614 pF
  • Reduce the power losses from switching, channel conduction, and diode conduction
  • Increased Efficiency
  • 12% lower on-resistance times gate charge FOM
  • Tuned for the lowest RDS - Qoss FOM
  • RG- and UIS-tested, RoHS-compliant, and halogen-free

 

Note: Complete technical details of the MOSFET can be found in the SiR680ADP Datasheet, linked at the bottom of this page.

 

The SiR680ADP can operate as a building block in a variety of DC/DC and AC/DC conversion applications like synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules. For more information about SiR680ADP, visit the official website of Vishay Intertechnology.

Component Datasheet

Get Our Weekly Newsletter!

Subscribe to stay updated with industry's latest Electronics components and news

* indicates required

Comments