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Transistors

RGWxx65C Hybrid IGBTs Series
RGWxx65C Hybrid IGBTs Series

RGWxx65C Hybrid IGBTs Series with Built-in SiC Diode for Automotive Chargers and UPS

ROHM Semiconductor has announced the RGWxx65C series (RGW60TS65CHR,
RF STPOWER LDMOS Power Transistors Series
RF STPOWER LDMOS Power Transistors Series

New RF STPOWER LDMOS Power Transistors Series for Commercial and Industrial Applications

STMicroelectronics has added three different product series to the STPOWER family of LDMOS transistors.
Integra IGT5259L50 GaN/SiC Transistor
Integra IGT5259L50 GaN/SiC Transistor

Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz

Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
Ampleon's LDMOS Amplifiers
Ampleon's LDMOS Amplifiers

New BLP15M9Sxxx and BLP15H9Sxxx LDMOS Amplifiers for Broadcast, Industrial, Scientific and Medical Applications

Ampleon has announced two new wideband amplifier series: the 32V-rated BLP15M9Sxxx and the 50V-rated BLP15H9Sxxx devices. Both BLP15M9Sxxx and BLP15H9Sxxx are based on 9th generation LDMOS and high-voltage LDMOS technologies respectively, and support frequencies of up t
EPC7014 GaN FET
EPC7014 High Switching Frequency Rad-Hard GaN Transistors

High Switching Frequency Rad-Hard GaN Transistors for Power Conversion Solution in Critical Spaceborne Applications

Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits.
GS-065-00-5-B-A E-Mode GaN Transistor
GS-065-00-5-B-A E-Mode GaN Transistor

GS-065-00-5-B-A: Compact Automotive Grade 650V GaN E-mode Transistor for Demanding High Power Applications

GaN System has expanded its family of automotive-grade 650V transistors with the introduction of GS-065-00-5-B-A, a 60A bottom side cooled transistor.
GAN041-650WSB GaN FETs
GAN041-650WSB GaN FETs

650 V GaN FETs for Reducing Form Factor and Minimizing System Costs in 80 PLUS Titanium-Class Industrial Power Supplies

Nexperia has introduced its second-generation 650V power GaN FET device family with RDS(on) performance down to 35 mΩ (typical).
MasterGaN2- Optimized Asymmetric GaN Transistors
MasterGaN2- Optimized Asymmetric GaN Transistors

MasterGaN2- Optimized Asymmetric GaN Transistors for Soft-Switching and Active-Rectification Converter Topologies

The MasterGaN2 from STMicroelectronics has been designed with two asymmetric gallium-nitride(GaN) transistors for delivering an integrated GaN solution suited to soft-switching and active-rectification
2SC828 NPN Amplifier Transistor
2SC828 NPN Amplifier Transistor

2SC828 - NPN Amplifier Transistor

2SC828 is an NPN, Silicon-based AF Amplifier Transistor that is mainly used in AF based audio equipment for amplification and switching. It has a Collector-Emitter Voltage of 45 Vdc with a Collector-Base voltage of 45 Vdc.
2N5457 General Purpose N-Channel JFET
2N5457 General Purpose N-Channel JFET

2N5457 General Purpose N-Channel JFET

2N5457 is an N-Channel Depletion layer Junction Field Effect Transistor. This JFET is an N- Channel - Depletion layer JFET that is widely used in audio equipment for amplification, tone modulation, and other purposes.