Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
The Vishay Intertechnology, Inc. has introduced the Siliconix TrenchFET Gen IV SiRA99DP, the first-ever 30V p-channel power MOSFET built to increase power density.
Mitsubishi Electric Corporation has introduced its N-series 1200V SiC-MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) with low power loss and high tolerance to self
Infineon Technologies has added the new 1700V surface-mounted devices (SMD) to its portfolio of CoolSiC MOSFET which can provide superior reliability along with low switching and conduction losses.