SiRA99DP - Low On-Resistance and Low Voltage Drop 30V P-channel Power MOSFET
The Vishay Intertechnology, Inc. has introduced the Siliconix TrenchFET Gen IV SiRA99DP, the first-ever 30V p-channel power MOSFET built to increase power density.
MOSFET
STD20NF06 N-Channel MOSFET
STD20NF06 is an avalanche tested N-Channel MOSFET from STMicroelectronics. It has very low RDS(on) resistance, less than 0.040 Ohms.
1200V SiC-Mosfets With Low Power Loss And High Tolerance For Industrial And EV Charging Applications
Mitsubishi Electric Corporation has introduced its N-series 1200V SiC-MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) with low power loss and high tolerance to self
1700V CoolSic SMD MOSFETs with Better Efficiency and Reduced Power Loss
Infineon Technologies has added the new 1700V surface-mounted devices (SMD) to its portfolio of CoolSiC MOSFET which can provide superior reliability along with low switching and conduction losses.
DMN3012LEG - Integrated Dual MOSFETs for Better Efficiency and Reduced PCB Space
Diodes Incorporated has introduced the DMN3012LEG integrated dual MOSFETs in a single 3.3mmx3.3mm package with increased efficiency to provide significant cost, power, and 50% space saving in
High Current, 40-60V, 7pin MOSFETs with Lower RDS(on) for Battery-Powered Applications
Infineon Technologies extended its portfolio of StrongIRFET 40-60V MOSFET product family with three new products, namely IRF40SC240, IRF60SC241, and IRL60SC216 in a D²PAK 7pin+ pa
High Density, Low Profile, 700V and 600V MOSFETs for Compact SMPS Designs
Alpha and Omega Semiconductor Limited has announced the release of 700V and 600V αMOS5 Super Junction MOSFET families as their latest generation of high voltage MOSFET.
High Current 900V and 1200V N-Channel SiC MOSFETs for Solar and Automotive Applications
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.
XK1R9F10QB – New 100V N-Channel Power MOSFET for Automotive Equipments
Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially fo
MCX W: Bluetooth LE, Zigbee, and Matter over Thread multiprotocol MCUs
The ECX-1637B is a low-aging crystal. This component is ideal for wireless and IoT applications.
AlphaWire introduces the EcoCable Mini Cable: the smallest solution to your biggest cable problems
The ACS71240 is designed to replace shunt resistors in applications that require small size.
InnoSwitch™3-EP family of offline CV/CC QR flyback switcher ICs feature 900 V PowiGaN™ GaN switches.
FSP open frame power supply units with many form factor and power ratings
Highest magnetic sensitivity, lowest power consumption, smaller size compared to Hall, AMR, and GMR
Magnetic current sensors are a compelling alternative to traditional shunt-based solutions
