Infineon Technologies has introduced a 650 V CoolSic Hybrid IGBT portfolio in a discrete package for battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power sup
The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.
The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.
Infineon Technologies has launched the new F-Series Protected IGBTs with TRENCHSTOP feature. This new IGBT includes built-in logic functionality and a dedicated driver IC which is programmable by the user.