XK1R9F10QB – New 100V N-Channel Power MOSFET for Automotive Equipments

XK1R9F10QB Power MOSFET
XK1R9F10QB Power MOSFET
XK1R9F10QB Power MOSFET

Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially for 48V automotive equipment such as load switches, switching power supplies, and driving of motors. This is the first U-MOS X-H Series of MOSFET from Toshiba with a trench structure and is fabricated with the company’s latest generation process.

 

Features of XK1R9F10QB Power MOSFET

  • U-MOS X-H Series MOSFET with a trench structure
  • Drain-Source Voltage: 100V
  • Drain current: 160A
  • Channel Temperature: 175 °C
  • Industry-leading low On-resistance of 1.92 m (VGS:10V)
  • AEC-Q101 qualified

 

Note: More technical details about the XK1R9F10QB N-Channel Power MOSFET can be found in the datasheet linked at the bottom of this page.

 

XK1R9F10QB delivers industry-leading low On-resistance with a maximum On-resistance of 1.92mΩ and an approximate 20% reduction against the current “TK160F10N1L.” This advance helps to reduce equipment power consumption. The Device delivers reduced switching noise as the capacitance characteristics of the device have been optimized, this also helps in reducing the EMI of the equipment. The threshold voltage width of the devices is tightened to 1V to enhance switching synchronization when used in parallel. For more information about XK1R9F10QB, visit the official website of Toshiba Electronic Devices & Storage Corporation.

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