The STP80NF70 is an N-channel Power MOSFET from ST Microelectronics. It has a drain to source voltage of 68V and a continuous collector current of 98A with low gate threshold voltage of 2-4V.
The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.
Vishay Intertechnology released new -30 V and -40 V Automotive Grade p-channel TrenchFET® power MOSFETs in the PowerPAK® SO-8L package with gullwing leads for increased board-level reliability.
The BSS138 is an SMD Package (SOT23) Logic Level N-Channel MOSFET with drain current of 170mA and Drain Source Voltage of 100V. The MOSFET also has low threshold voltage of 1.7V typically.
The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.
The BSS138 is an SMD Package Logic Level N-Channel MOSFET with low on-state resistance (3.5Ω) and low input capacitance (40 pF). Adding to this the Mosfet can also switching at high speed of 20ns.
The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications.