P55NF06 N-Channel Power MOSFET
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
MOSFET
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
Optically Isolated Load-Biased Gate Driver Boosts the External MOSFET Start-up Speed and Eliminates the Need for External Power Supply
Littelfuse, Inc. has announced the high-voltage optically-isolated MOSFET gate that requires no external power supply and can provide fast load turn-on speeds in the order of tens of microseconds.
IRF530 N-Channel MOSFET
IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.
IRF9540 P-channel MOSFET
IRF9540 is a P-channel MOSFET that can drive maximum load current up to -19A and voltage up to -100V. In pulse mode, it can withstand a load up to -72A. IRF9540 is designed to have low on-state resistance and fast switching.
IRF510 N-channel Power MOSFET
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 N-Channel Power MOSFET
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
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