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MOSFET

FQD2N60C Power MOSFET
FQD2N60C Power MOSFET

FQD2N60C Power MOSFET

The FQD2N60C is a switching MOSFET from Fairchild Semiconductor that features a high breakdown voltage optimized for primary side switching in DC-DC converters.  
CoolMOS 600V High Voltage PFD7 MOSFET
CoolMOS 600V High Voltage PFD7 MOSFET

CoolMOS 600V High Voltage MOSFET from Infineon for Ultra-high Power Density Designs

Infineon Technology has broadened its CoolMOS portfolio with the PFD7 MOSFET series, which provides best-in-class-Performance and ease of usability. These devices are suitable for ultrahigh power
SiSS05DN MOSFET
SiSS05DN MOSFET

SiSS05DN – Compact P-channel MOSFET with Low On-Resistance for Increased Power Density in Portable Electronics

Vishay Intertechnology has introduced the SiSS05DN, a 30V P-channel Trench FET Gen IV power MOSFET that provides industry-low on-resistance.
AO3404 N-Channel MOSFET
AO3404 N-Channel MOSFET

AO3404 N-Channel MOSFET

The AO3404 is a small signal TrenchFET MOSFET from Alpha and Omega Semiconductors. These MOSFETs are known for their low on-resistance and low gate charge.  
SiR680ADP MOSFET
Siliconix SiR680ADP MOSFET

SiR680ADP - 80V MOSFET with 2.35mΩ On-Resistance and Low Gate Charge for High Efficiency Applications

Vishay Intertechnology, Inc has introduced the Siliconix SiR680ADP, a new 80 V TrenchFET Gen IV N-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.  The
SCT3xxxxR – 4-Pin SiC MOSFETs with low switching loss
SCT3xxxxR – 4-Pin SiC MOSFETs with low switching loss

SCT3xxxxR – 4-Pin SiC MOSFETs with low switching loss

ROHM announced the availability of six (SCT3xxx xR series) new trench gate structure SiC MOSFETs (650V/ 1200V).
VIPer26K Converter Features High MOSFET Breakdown Voltage 1050V
VIPer26K Converter Features High MOSFET Breakdown Voltage 1050V

VIPer26K Converter Features High MOSFET Breakdown Voltage 1050V

The STMicroelectronics launched VIPer26K high-voltage converter comprises a 1050V avalanche-rugged N-channel power MOSFET that allow offline power supplies to combine a wide input-voltage range with the advantages of a simplified design.
STP80NF70 MOSFET
STP80NF70 MOSFET

STP80NF70 N-Channel MOSFET

The STP80NF70 is an N-channel Power MOSFET from ST Microelectronics. It has a drain to source voltage of 68V and a continuous collector current of 98A with low gate threshold voltage of 2-4V.
IRF830 N-Channel Power MOSFET
IRF830 N-Channel Power MOSFET

IRF830 N-Channel Power MOSFET

The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
IRFZ44N N-Channel Power MOSFET
IRFZ44N N-Channel Power MOSFET

IRFZ44N N-Channel Power MOSFET

The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.