650V CoolSiC MOSFETs with Increased avalanche Capability target High Power Applications and offer Improved Switching Behavior

Infineon Technologies AG has introduced a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs that is built on Infineon’s state-of-the-art SiC trench technology and target high power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy systems, energy storage, and battery formation. These devices come in a compact D 2PAK SMD 7-pin package with .XT interconnection technology and offer improved switching behavior at higher currents.

Featuring a wide voltage from gate to source (V GS) range from -5 V up to 23 V and supporting 0 V turn-off V GS and a gate-source threshold voltage (V GS(th)) greater than 4 V, this new family also works with standard MOSFET gate driver ICs. These devices offer 80 percent lower reverse recovery charge (Q rr) and drain-source charge (Q oss) than the best silicon reference. Moreover, the reduced switching losses allow high-frequency operations in smaller system sizes, enabling higher efficiency and power density. 

Features

• Optimized switching behavior at higher currents

• Commutation robust fast body diode with low Qf

• Superior gate oxide reliability

• Tj,max=175°C and excellent thermal behavior

• Lower RDS(on) and pulse current dependency on temperature

• Increased avalanche capability

• Compatible with standard drivers(recommendeddrivingvoltage:0V-18V)

• Kelvin source provides upto 4 times lower switching losses

Application

• Telecom and Server SMPS

• UPS(uninterruptable power supplies)

• Solar PV inverters

• EV charging infrastructure

• Energy storage and battery formation

• Class D amplifiers