Skip to main content

Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications

Latest-Generation Silicon-Carbide Power Devices
Latest-Generation Silicon-Carbide Power Devices

STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-generation SiC platform and have a higher voltage rating in relation to their die size, making the technology an excellent choice for EV applications and fast-charging EV infrastructures. These MOSFETs set new industry-leading benchmarks for the accepted figures-of-merits (FoMs) [on-resistance (Ron) x die size, and Ron x gate charge (Qg)] that express transistor efficiency, power density, and switching performance. 


These devices benefit from a very fast intrinsic diode that delivers the bi-directional properties needed for automotive onboard chargers (OBCs) used in Vehicle-to-X (V2X) power flow allowing the transmission of electricity from an OBC battery to the infrastructure. Moreover, their high-frequency capability allows smaller passive components within power systems, which permit more compact and lightweight electrical equipment in the vehicle.



  • AEC-Q101 qualified

  • Very low RDS(on) over the entire temperature range

  • High-speed switching performances

  • Very fast and robust intrinsic body diode

  • Source sensing pin for increased efficiency



  • Electric Vehicles

  • Industrial Applications


Availability and Pricing

The first products available are the 650V SCT040H65G3AG which is priced at $5.00.

Related Post


Join 20K+subscribers

We will never spam you.

* indicates required

Be a part of our ever growing community.