Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications
STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-generation SiC platform and have a higher voltage rating in relation to their die size, making the technology an excellent choice for EV applications and fast-charging EV infrastructures. These MOSFETs set new industry-leading benchmarks for the accepted figures-of-merits (FoMs) [on-resistance (Ron) x die size, and Ron x gate charge (Qg)] that express transistor efficiency, power density, and switching performance.
These devices benefit from a very fast intrinsic diode that delivers the bi-directional properties needed for automotive onboard chargers (OBCs) used in Vehicle-to-X (V2X) power flow allowing the transmission of electricity from an OBC battery to the infrastructure. Moreover, their high-frequency capability allows smaller passive components within power systems, which permit more compact and lightweight electrical equipment in the vehicle.
Very low RDS(on) over the entire temperature range
High-speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Availability and Pricing
The first products available are the 650V SCT040H65G3AG which is priced at $5.00.