Intended to offer more choice to power system designers, Infineon Technologies has introduced diverse design options that can offer maximum performance in the smallest space.
Microchip Technology has introduced the M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for the operation against extreme particle interactions and solar and electromagnetic events in commercial aerospace and defense space applications.
ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market.
Nexperia has introduced new 0.55 mΩ RDS(on) 40 V power MOSFETs in high-reliability LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications.
Vishay Intertechnology has released a new 30 V N-Channel MOSFET, SISS52DN that is capable of delivering high power density and efficiency for isolated and non-isolated topologies.
Panasonic has introduced the new Photovoltaic MOSFET High Power Type PhotoMOS Relays product line in a small package size (SSOP) with higher short circuit current and drop-out voltage to MOSFET’s gate.