Siliconix SQJ264EP from Vishay Intertechnology is the new AEC-Q101 qualified N-channel 60 V MOSFET that is designed to cater to the need for space savings and increased efficiency in DC/DC switch-mode power sup
Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
Infineon Technologies has added the new 1700V surface-mounted devices (SMD) to its portfolio of CoolSiC MOSFET which can provide superior reliability along with low switching and conduction losses.
If the power source of the circuit is reversed, for example, connecting the positive wire into the ground and the negative wire into the circuit’s Vcc.