Nexperia has announced the release of a series of half-bridge automotive MOSFETs (BUK7V4R2-40H and BUK9V13-40H) that offer 60 % lower parasitic inductance and improved thermal performance
GeneSiC Semiconductors has introduced the industry-leading 1200V 3rd generation G3R SiC MOSFETs in the optimized low-inductance discrete packages (SMD and through-hole).
Omron Electronic Components has introduced the G3VM – PSON, an ultra-compact MOSFET relay with a high current capacity for industrial and test applications.
Siliconix SQJ264EP from Vishay Intertechnology is the new AEC-Q101 qualified N-channel 60 V MOSFET that is designed to cater to the need for space savings and increased efficiency in DC/DC switch-mode power sup
Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.