The N-channel high power MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistor) are popular for driving higher voltages and currents from a microcontroller.
OMRON Electronic Components has released new high voltage and high current versions of its innovative T-configuration MOSFET relay modules. The new OMRON G3VM T-modules o
The IR2153D is an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front-end oscillator similar to the industry standard CMOS 555 timer.
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.
IRF9540 is a P-channel MOSFET that can drive maximum load current up to -19A and voltage up to -100V. In pulse mode, it can withstand a load up to -72A. IRF9540 is designed to have low on-state resistance and fast switching.
The end of August was a pretty interesting week with lots of exciting components being launched for various automotive, industrial, and space applications.
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.