On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.
Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially fo
The FQD2N60C is a switching MOSFET from Fairchild Semiconductor that features a high breakdown voltage optimized for primary side switching in DC-DC converters.
Infineon Technology has broadened its CoolMOS portfolio with the PFD7 MOSFET series, which provides best-in-class-Performance and ease of usability. These devices are suitable for ultrahigh power
The AO3404 is a small signal TrenchFET MOSFET from Alpha and Omega Semiconductors. These MOSFETs are known for their low on-resistance and low gate charge.
Vishay Intertechnology, Inc has introduced the Siliconix SiR680ADP, a new 80 V TrenchFET Gen IV N-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package. The
MOSFET is one of the important components in Power Electronics and we have covered many MOSFETs with their Pin diagram, datasheet, features and how to use them in the circuit.