New Hot-Swap ASFETs with Enhanced SOA Performance Minimize Derating and Improve Current Sharing

5 August 2021 - 0 Comments

Nexperia has announced new PSMN4R2-80YSE (80V, 4.2mΩ) and PSMN4R8-100YSE (100V, 4.8mΩ) hot-swap ASFETs with enhanced SOA performance, targeting soft-start applications in 5G telecom systems & 48 V server environments and industrial equipment needing e-fuse and battery protection. The new hot-swap ASFETs use a combination of the latest silicon technology and copper-clip package construction to significantly strengthen the Safe Operating Area and minimize PCB area. Moreover, these products are just 5 mm x 6 mm x 1.1 mm, offering reductions of 80 % and 75 % for PCB footprint and device height respectively.

These rugged ASFETs eliminate the Spirito effect and increase SOA by 166 % at 50 V. These hot-swap ASFETs are packaged in the Power-SO8 compatible LFPAK56E and the unique internal copper-clip construction of the package improves thermal and electrical performance whilst substantially reducing footprint size. These devices also feature a maximum junction temperature of 175 °C, meeting IPC9592 regulations for telecoms and industrial applications.

Features

Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
LFPAK56E package for applications that demand the highest performance and reliability in a 30 mm2 footprint