RGWxx65C Hybrid IGBTs Series with Built-in SiC Diode for Automotive Chargers and UPS

ROHM Semiconductor has announced the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, and RGW00TS65CHR) of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. These Devices are qualified under the AEC-Q101 automotive reliability standard and are ideal for automotive and industrial applications that handle high power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEVs). The RGWxx65C series utilizes ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss.

Moreover, since the recovery current does not have to be handled by the IGBT in turn-on mode, IGBT turn-on loss is significantly reduced. Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in automotive and industrial applications.

Features

• Withstand Voltage VCES (V): 650

• Collector Current IC@100°C (A): 30

• Conduction Loss VCE(sat) Typ (V): 1.5

• Freewheeling Diode: SiC SBD

• AEC-Q101 Qualified: Yes

• Package: TO-247N

Applications

• Automotive chargers (onboard chargers)

• Vehicle DC/DC converters

• Solar power inverters (power conditioners)

• Uninterruptible power supplies (UPS)

Availability

Samples of RGWxx65C IGBTs are available now and mass production of the product will take place in Dec’ 21.