SiRA99DP - Low On-Resistance and Low Voltage Drop 30V P-channel Power MOSFET Skip to main content

SiRA99DP - Low On-Resistance and Low Voltage Drop 30V P-channel Power MOSFET

Siliconix TrenchFET Gen IV SiRA99DP
Siliconix TrenchFET Gen IV SiRA99DP

The Vishay Intertechnology, Inc. has introduced the Siliconix TrenchFET Gen IV SiRA99DP, the first-ever 30V p-channel power MOSFET built to increase power density. The new MOSFET is designed with low on-resistance and reduced voltage drop for minimizing conduction power losses for higher power density.


The SiRA99DP delivers best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in switching applications, of 185 mΩ*nC. The new device is suitable to be used in 12V input devices such as an adapter, battery, and general-purpose power switches; reverse-polarity battery protection; OR-ing functionality; and motor drive control in telecom equipment, servers, and industrial PCs and robots.


The new device has an increased power density, which saves PCB space in these applications by reducing the number of components in parallel.  Since the device is a P-channel MOSFET, the device doesn’t require a charge pump to provide the positive gate bias needed by its n-channel counterparts.


Features of Siliconix TrenchFET Gen IV SiRA99DP

  • Very low RDS (on) minimizes voltage drop and reduces conduction loss
  • Eliminates the need for a charge pump
  • Offer on-resistance of 1.7 mΩ at 10 V
  • 6.15 mm by 5.15 mm thermally enhanced PowerPAK® SO-8 single package
  • Ultra-low gate charge of 84nC
  • 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free


Note: More technical information about SiRA99DP can be found in the datasheet linked at the bottom of this page and on the SiRA99DP product page.

Component Datasheet

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