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1200V Silicon Carbide (SiC) MOSFET Offers High Voltage Resistance, High-Speed Switching, and Low On-Resistance for Industrial Applications

TW070J120B 1200V Silicon Carbide (SiC) MOSFET

Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications. The SiC MOSFET has been fabricated based on Toshiba’s second-generation chip design. This offers an increased reliability low input capacitance, low gate-input charge, and low drain-to-source On-resistance.


Compared to Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT) (‘GT40QR21’), the new SiC MOSFET cuts turn-off switching losses by about 80% and switching time (fall time) by about 70%, while delivering low On-voltage characteristics with a drain current of 20A or less.


The TW070J120B helps in reducing power loss and equipment size in industrial applications such as large-capacity AC-DC converters, photovoltaic inverter, and large capacity bidirectional DC-DC converters.


Features of TW070J120B SiC MOSFET

  • Second generation chip design (built-in SiC SBD)
  • High voltage (VDSS=1200V), low input capacitance (Ciss=1680pF (typ.)), and low total gate charge (Qg=67nC (typ.))
  • Low diode forward voltage (VDSF=-1.35V (typ.)) and high gate threshold voltage (Vth=4.2 to 5.8V)   
  • Drain Source On-Resistance: RDS(ON)=70mΩ (typ.)
  • Easy-to-handle enhancement type


Note: More technical information can be found in the TW070J120B Datasheet linked at the bottom of this page and on the TW070J120B product page.

Component Datasheet

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