Compact Integrated 40V MOSFET Half-Bridge Power Stage for Increased Power Density and Efficiency

SiZ240DT N-Channel MOSFET
SiZ240DT N-Channel MOSFET
SiZ240DT N-Channel MOSFET

Vishay Intertechnology has introduced SiZ240DT, a 40V n-channel MOSFET half-bridge power stage in a compact PowerPAIR 3.3 mm by 3.3 mm package. The device integrates high side and low side MOSFETs in one compact package and provides best in class on-resistance and on-resistance times gate charge. It also delivers increased power density and efficiency for white goods and industrial, medical, and telecom applications.


Vishay Siliconix SiZ240DT acts as a space-saving solution for motor control in vacuum cleaners, drones, power tools, home/office automation, and non-implantable medical devices. It also half-bridge power stages for the synchronous buck, DC/DC conversions, wireless chargers, and switch-mode power supplies in telecom equipment and servers.


The wireless internal connections of the device minimize parasitic inductance to enable high-frequency switching and its optimized Qgd / Qgs ratio reduces noise to further enhance the device’s switching characteristics.


Samples and production quantities of the new dual MOSFET are available with lead times of 12 weeks for large orders.


Features SiZ240DT n-Channel MOSFET

  • TrenchFET Gen IV power MOSFETs
  • Maximum on-resistance (Channel 1 MOSFET): 8.05 mΩ @10 V and 12.25 mΩ @ 4.5 V.
  • Maximum on-resistance (Channel 2 MOSFET): 8.41 mΩ @10 V and 13.30 mΩ @ 4.5 V.
  • Low gate charge: 6.9 nC (Channel 1) and 6.5 nC (Channel 2)
  • 14% lower on-resistance time
  • 100 % Rg and UIS tested


Note: More technical information can be found in the SiZ240DT Datasheet linked at the bottom of this page and on the SiZ240DT n-channel MOSFET product page.

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