New TPHR7404PU Power MOSFET With Low-Spike Capability Reduces EMI in Switching Power Supply Applications

Toshiba has launched a 40V, N-channel MOSFET “TPHR7404PU” with low-spike capability and the latest generation U-MOSIX-H process. This MOSFET maintains a low on-resistance of 0.74mΩ (max) at a VGS of 10V and is ideal for secondary synchronous rectification in switching power supply applications, due to its contribution to reduced EMI. Its low-spike capability reduces overshoot in switching applications and is beneficial for applications such as high-efficiency DC-DC converters, motor drivers, and switching voltage regulators.

The TPHR7404PU MOSFET features a gate threshold voltage of 2V to 3V (Id =1mA), which will help to avoid unintended turn-on. It has a new cell structure that employs a parasitic snubber to reduce noise and ringing during switching. Moreover, this compact-sized MOSFET is available in a 5 x 6mm SOP Advance package, and its low 0.71°C/W channel-to-case thermal resistance makes it suitable for efficiency-focused, compact power solutions.

Features

• High-speed switching

• Small gate charge: QSW = 34nC (typ.)

• Small output charge: Qoss = 90nC (typ.)

• Low drain-source on-resistance: RDS(ON) = 0.51 mΩ (typ.) (VGS = 10V)

• Low leakage current: IDSS = 10µA (max) (VDS = 40 V)

• Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10V, ID = 1.0mA)

Applications

• High-Efficiency DC-DC Converters

• Switching Voltage Regulators

• Motor Drivers