The end of August was a pretty interesting week with lots of exciting components being launched for various automotive, industrial, and space applications.
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
Intended to offer more choice to power system designers, Infineon Technologies has introduced diverse design options that can offer maximum performance in the smallest space.
Microchip Technology has introduced the M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for the operation against extreme particle interactions and solar and electromagnetic events in commercial aerospace and defense space applications.
ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market.