Half Bridge 2-PACK 1200V SiC MOSFETs for Reliable and Robust Operation of EV Charging Stations

1200V Full Silicon Carbide (SiC) MOSFET 2-PACK Module
1200V Full Silicon Carbide (SiC) MOSFET 2-PACK Module
1200V Full Silicon Carbide (SiC) MOSFET 2-PACK Module

ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market. The planar technology-based modules are suitable for driving voltage range of 18-20V and they can simply be driven even with negative gate voltages.


Configured as a 2-PACK half-bridge, the 10mohm NXH010P120MNF1 module is housed in an F1 package and the 6mohm NXH006P120MNF2 is housed in the F2 package. The press-fit pins of the device make them ideal for industrial applications, these devices come with an embedded negative temperature coefficient(NTC) thermistor for providing temperature monitoring. The new device can deliver improved efficiency, greater power density, improved electromagnetic interference(EMI), and reduced system size and weight.


Features of NXH010P120MNF1 and NXH006P120MNF2 SiC MOSFETs

  • 6 m /1200 V SiC MOSFET Half−bridge
  • Thermistor
  • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM
  • Recommended gate voltage 18V - 20V
  • Low thermal resistance
  • NXH010P120MNF1 comes with press-Fit Pins
  • NXH006P120MNF2 Comes with solderable pins as well as press-fit pins


Note: More technical information can be found in the NXH010P120MNF1 Datasheet linked at the bottom of this page and on the NXH010P120MNF1 and NXH006P120MNF2 MOSFETs product page.

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