Infineon Technologies has added the new 1700V surface-mounted devices (SMD) to its portfolio of CoolSiC MOSFET which can provide superior reliability along with low switching and conduction losses.
If the power source of the circuit is reversed, for example, connecting the positive wire into the ground and the negative wire into the circuit’s Vcc.
Diodes Incorporated has introduced the DMN3012LEG integrated dual MOSFETs in a single 3.3mmx3.3mm package with increased efficiency to provide significant cost, power, and 50% space saving in
Alpha and Omega Semiconductor Limited (AOS) has introduced the new 1200V silicon carbide (SiC) αSiC MOSFET technology platform targeting the industrial and automotive market to enable high levels of efficiency
Infineon Technologies extended its portfolio of StrongIRFET 40-60V MOSFET product family with three new products, namely IRF40SC240, IRF60SC241, and IRL60SC216 in a D²PAK 7pin+ pa
Alpha and Omega Semiconductor Limited has announced the release of 700V and 600V αMOS5 Super Junction MOSFET families as their latest generation of high voltage MOSFET.
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.