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SiC MOSFET

STGAP2SiCS Galvanically Isolated 4A Gate Driver
STGAP2SiCS Galvanically Isolated 4A Gate Driver

STGAPSiCS: Galvanically Isolated Gate Driver with Dual Input Pins for Safe Control of SiC MOSFETS

STMicroelectronics has introduced the STGAPSiCS, 4A Galvanically isolated gate driver for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1200V.
AOM033V120X2Q Automotive Grade 1200V/33mΩ αSiC MOSFETs
AOM033V120X2Q Automotive Grade 1200V/33mΩ αSiC MOSFETs

AOM033V120X2Q: Automotive Grade 1200V/33mΩ αSiC MOSFETs for Superior Performance and Efficiency in Electric Vehicles

Alpha and Omega Semiconductors Limited has collaboratively introduced AOM033V120X2Q, AEC-Q101 qualified 1200V/33mΩ
1200V 3rd Generation G3R SiC MOSFETs
1200V 3rd Generation G3R SiC MOSFETs

Highly Efficient and Robust Third Generation SiC MOSFETs for High Performance and Reliability in Industrial and Automotive Applications

GeneSiC Semiconductors has introduced the industry-leading 1200V 3rd generation G3R SiC MOSFETs in the optimized low-inductance discrete packages (SMD and through-hole). 
CIPOS Maxi IPM IM828 Series from Infineon Technologies
CIPOS Maxi IPM IM828 Series from Infineon Technologies

CIPOS Maxi IM828 - 1200V Integrated Power Module (IPM) to Increase System Reliability, Optimize PCB Size, and Reduce System Costs

Infineon Technologies has introduced a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM).
TW070J120B SiC MOSFET
TW070J120B 1200V Silicon Carbide (SiC) MOSFET

1200V Silicon Carbide (SiC) MOSFET Offers High Voltage Resistance, High-Speed Switching, and Low On-Resistance for Industrial Applications

Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
N-Series 1200V SiC-MOSFET
N-Series 1200V SiC-MOSFET

1200V SiC-Mosfets With Low Power Loss And High Tolerance For Industrial And EV Charging Applications

Mitsubishi Electric Corporation has introduced its N-series 1200V SiC-MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) with low power loss and high tolerance to self
N-Channel SiC MOSFETs
SiC N-Channel MOSFETs

High Current 900V and 1200V N-Channel SiC MOSFETs for Solar and Automotive Applications

On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.