SiC MOSFET
Highly Efficient and Robust Third Generation SiC MOSFETs for High Performance and Reliability in Industrial and Automotive Applications
GeneSiC Semiconductors has introduced the industry-leading 1200V 3rd generation G3R SiC MOSFETs in the optimized low-inductance discrete packages (SMD and through-hole).
1200V Silicon Carbide (SiC) MOSFET Offers High Voltage Resistance, High-Speed Switching, and Low On-Resistance for Industrial Applications
Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
1200V SiC-Mosfets With Low Power Loss And High Tolerance For Industrial And EV Charging Applications
Mitsubishi Electric Corporation has introduced its N-series 1200V SiC-MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) with low power loss and high tolerance to self
High Current 900V and 1200V N-Channel SiC MOSFETs for Solar and Automotive Applications
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.