Texas Instruments has introduced the new highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction inverters and maximize electric vehicle (EV) driving range.
STMicroelectronics has released two new STPOWER modules that use ST’s ACEPACK 2 package technology to ensure high power density and contain 1200V silicon-carbide (SiC) MOSFETs in popular
onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density.
Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions