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STGAPSiCS: Galvanically Isolated Gate Driver with Dual Input Pins for Safe Control of SiC MOSFETS

STGAP2SiCS Galvanically Isolated 4A Gate Driver
STGAP2SiCS Galvanically Isolated 4A Gate Driver

STMicroelectronics has introduced the STGAPSiCS, 4A Galvanically isolated gate driver for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1200V. The STGAP2SiCS is capable of producing gate-driving voltage up to 26V and can have a raised Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC MOSFETs. The driver features dual input pins that let designers determine the gate-drive signal polarity.

 

The STGAP2SiCS provides 6kV of galvanic isolation between the input section and the gate-driving output. This ensures safety in consumer and industrial applications. Its 4A output-sink/source capability is suited to mid-and high-power converters, power supplies, and inverters in equipment such as high-end home appliances, industrial drives, fans, induction heaters, welders, and UPSes.

 

The input circuitry is compatible with CMOS/TTL logic down to 3.3V, which allows easy interfacing with a wide variety of control ICs. The total delay is less than 75ns, permitting accurate pulse-width modulation (PWM) control up to high switching frequencies. Matched propagation delays between the low-voltage and high-voltage sections prevent cycle distortion and minimize energy losses. Available at a price point of $2.00 in the quantities of 1000 units, the STGAP2SiCS is housed in a wide-body SO-8W package that ensures 8mm creepage within a compact footprint.

 

Features of STGAP2SiCS

  • High voltage rail up to 1200 V
  • Driver current capability: 4 A sink/source @25°C
  • dV/dt transient immunity ±100 V/ns in the full temperature range
  • Overall input-output propagation delay: 75 ns
  • Separate sink and source option for easy gate driving configuration
  • 4 A Miller CLAMP dedicated pin option
  • UVLO function
  • Gate driving voltage up to 26 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shut-down protection
  • Standby function
  • 6 kV galvanic isolation
  • Widebody SO-8W package

 

Note: More technical information can be found in the STGAP2SiCS Datasheet linked at the bottom of this page and on the product page of the STGAPSiCS Galvanically isolated gate driver.

Component Datasheet

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