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SiC MOSFET

650V CoolSiC MOSFETs
650V CoolSiC MOSFETs

650V CoolSiC MOSFETs with Increased avalanche Capability target High Power Applications and offer Improved Switching Behavior

Infineon Technologies AG has introduced a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs that is built on Infineon’s st
SiC MOSFET Dual Modules
SiC MOSFET Dual Modules

High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems

Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions
Latest-Generation Silicon-Carbide Power Devices
Latest-Generation Silicon-Carbide Power Devices

Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications

STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-genera
Galvanically Isolated 4A SiC Gate Driver
Galvanically Isolated 4A SiC Gate Driver

Galvanically Isolated 4A SiC Gate Driver Enhances Robustness and Reliability in Energy-Conscious Power Systems

STMicroelectronics has introduced a single-channel gate driver STGAP2SiCSN which comes in a space-saving narrow-body SO-8 package and is opt
AgileSwitch 2ASC-12A2HP Digital Gate Driver
AgileSwitch 2ASC-12A2HP Digital Gate Driver

AgileSwitch Digital Gate Driver with Augmented Switching Technology for Silicon Carbide MOSFETs

Microchip Technology Inc. has announced a new 1200V production-ready digital gate driver to complement its broad portfolio of silicon carbide MOSFET discrete and module products.
Gen 4 SiC FETs
Gen 4 SiC FETs

New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility

UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
RGWxx65C Hybrid IGBTs Series
RGWxx65C Hybrid IGBTs Series

RGWxx65C Hybrid IGBTs Series with Built-in SiC Diode for Automotive Chargers and UPS

ROHM Semiconductor has announced the RGWxx65C series (RGW60TS65CHR,
BM2SC12xFP2-LBZ Power ICs
BM2SC12xFP2-LBZ Power ICs

Compact BM2SC12xFP2-LBZ Power ICs with Built-In 1700V SiC MOSFET for Reducing Components Count and Time-to-Market

Intending to achieve higher efficiency and increased output power in a single surface-mounted TO263 7L package, ROHM has announced the BM2SC12xFP2-LBZ power ICs with integrated 1700V SiC MOSFET.
1200V Full Silicon Carbide (SiC) MOSFET 2-PACK Module
1200V Full Silicon Carbide (SiC) MOSFET 2-PACK Module

Half Bridge 2-PACK 1200V SiC MOSFETs for Reliable and Robust Operation of EV Charging Stations

ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market.
3-Phase SiC MOSFET Intelligent Power Module (IPM)
3-Phase SiC MOSFET Intelligent Power Module (IPM)

Liquid Cooled 3-Phase SiC MOSFET Intelligent Power Module (IPM) for High Efficiency and Power Density in E-mobility and Aerospace Applications

CISSOID has added new liquid-cooled modules to its growing platform of 3-Phase Silicon Carbide (SiC) MOSFET Intelligent Power Module (IPM) products for E-mobility tailored for lower switching losses or higher power.