SQJ264EP – 60V MOSFET Compact SO-8L Package to Save Space and Increase Efficiency in Switch‑Mode Power Supplies for Automotive Applications
Siliconix SQJ264EP from Vishay Intertechnology is the new AEC-Q101 qualified N-channel 60 V MOSFET that is designed to cater to the need for space savings and increased efficiency in DC/DC switch-mode power supplies for automotive applications. Encompassed in the PowerPAK SO-8L dual asymmetric package, this N-channel 60V MOSFET combines high and low side MOSFET in a compact 5 mm by 6 mm footprint, with low side maximum on-resistance down to 8.6 mW.
Copackaging two TrenchFET MOSFETs in an asymmetric package, the device ensures to minimize the component counts and board space requirements but increases power density. The optimized die size combination of control (high side) and synchronous (low side) MOSFETs provides higher efficiency in power conversions with duty cycles below 50%.
The SQJ264EP Channel 1 MOSFET features a maximum on-resistance of 20 mW at 10 V and a typical gate charge of 9.2 nC while channel 2 MOSFET offers on-resistance of 8.6 mW at 10 V and a typical gate charge of 19.2 nC.
The high-temperature operation to +175°C enables the device to provide the ruggedness and reliability required for automotive applications such as infotainment systems, displays, LED lighting, e-bikes, etc. Its gullwing leads allow for better solder flow beneath its pins, increased automatic optical inspection (AOI) capabilities, and higher board-level reliability compared to QFN single and dual packages. Besides, the device is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Features of SQJ264EP
- TrenchFET power 60 V MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
- PowerPAK SO-8L dual asymmetric package
- Temperature operation to +175°C
Samples and production quantities of the SQJ264EP are available now with lead times of 12 weeks for large orders.