SiHH070N60EF - 600V EF Fast Body Diode MOSFETs with Low On-Resistance and High Efficiency in Power Conversion Applications
SiHH070N60EF from Vishay Intertechnology is the latest 600V EF fast body diode MOSFET series provide low on-resistance and increase efficiency in power conversion applications. These fourth-generation n-channel devices lower the conduction and switching losses to save energy. Built on the company’s latest energy-efficient E Series super junction technology, these MOSFETs feature low typical on-resistance of 0.061 Ω at 10 V and ultra-low gate charge down to 50 nC.
The new MOSFETs are RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing. The device’s FOM of 3.1 Ω*nC is 30 % lower than the closest competing MOSFET in the same class. These devices provide low effective output capacitances Co(er) and Co(tr) of 90 pf and 560 pF, respectively for improved switching performance in zero voltage switching (ZVS) topologies such as LLC resonant converters. The Co(tr) of the device is 32 % lower than the closest competing MOSFET in the same class.
The SiHH070N60EF MOSFETs address the need for efficiency and power density improvements in two of the first stages of the power system architecture viz. totem-pole bridgeless power factor correction (PFC) and soft-switched DC/DC converter topologies. Samples and production quantities of the SiHH070N60EF are available now, with lead times of 10 weeks.
Features of SiHH070N60EF MOSFETs
- Fourth-generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Note: More technical information can be found in the SiHH070N60EF MOSFETs datasheet linked at the bottom of this page and on the SiHH070N60EF MOSFETs product page.