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New TO-Leadless Packaged Silicon Carbide MOSFET with Low Output Capacitance and 30% Savings in PCB Area

TO-Leadless Packaged Silicon Carbide MOSFET
TO-Leadless Packaged Silicon Carbide MOSFET

onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density. With a footprint of just 9.90 mm x 11.68 mm, the TOLL package offers 30% savings in the PCB area, and at a profile of just 2.30 mm, it occupies 60% less volume than a D2PAK package. The first SiC MOSFET to be offered in the TOLL package is the NTBL045N065SC1 which is intended for demanding applications including switch-mode power supplies (SMPS), server, and telecommunication power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage.


The TOLL package offers better thermal performance and lower package inductance (2 nH) than a D2PAK 7-lead. Its Kelvin source configuration ensures lower gate noise and lowers switching losses, including a 60% reduction in turn-on loss (EON) which ensures significant improvements in efficiency and power density in challenging power designs as well as improved EMI and easier PCB design.


The NTBL045N065SC1 has a VDSS rating of 650 V with a typical RDS(on) of just 33 mΩ and a maximum drain current (ID) of 73 A. Based upon wide bandgap (WBG) SiC technology, the device has a maximum operating temperature of 175°C and ultra-low gate charge (QG(tot) = 105 nC) that significantly reduces switching losses.



  • High Junction Temperature (Tj = 175°C)

  • Leadless thin SMD package

  • Ultra Low Gate Charge (Qg(tot) = 105 nC)

  • Low Effective Output Capacitance (Coss = 162 pF)

  • Zero reverse recovery current of body diode

  • Typ. RDS(on) = 33 mΩ @ Vgs : 18V

  • 650V rated

  • 100% Avalanche Tested



  • Telecommunication

  • Cloud system

  • Industrial

Component Datasheet

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