The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.
IRF9540 is a P-channel MOSFET that can drive maximum load current up to -19A and voltage up to -100V. In pulse mode, it can withstand a load up to -72A. IRF9540 is designed to have low on-state resistance and fast switching.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.