Vishay Launches SiEH4800EW 80V MOSFET with Ultra-Low On-Resistance for Power Applications

Vishay Intertechnology has introduced the SiEH4800EW, an 80 V TrenchFET Gen IV n-channel MOSFET designed for industrial power applications. Housed in a compact PowerPAK 8x8SW bond wireless (BWL) package, the new MOSFET delivers 15% lower on-resistance and 18% better thermal performance (RthJC) than similar devices in the same footprint. It is not only compact but also has a super low profile of just 1 mm. That means it saves board space without compromising performance.

This MOSFET is designed for efficiency and space savings. With an on-resistance as low as 0.88 mW, it reduces energy loss when conducting electricity, helping improve overall system efficiency. It can also manage heat effectively and stay cooler during operation, as it has low thermal resistance of 0.36 °C/W, which is important for maintaining performance and reliability. Despite its compact 8x8 mm footprint, it takes up about 50% less space than traditional TO-263 packaged MOSFETs. The device is designed with fused lead design for a larger solder pad area, improving current handling and reliability. Wettable flanks make it easier to solder and make visual inspection smoother.

Ideal for demanding applications such as motor controls, power tools, welding equipment, robotics, BMS, and 3D printing, the SiEH4800EW supports temperatures up to +175 °C, and its BWL design helps reduce parasitic inductance. It is RoHS-compliant, halogen-free, and fully tested for gate charge (Rg) and UIS reliability.

Features of N-Channel 80 V (D-S) 175 °C MOSFET

• Low on-resistance reduces conduction power losses

• Efficient thermal design supports better heat dissipation

• Compact 8x8 mm footprint saves space

• Fused lead boosts solder pad reliability

• Wettable flanks enable easier visual inspection

Applications of N-Channel 80 V (D-S) 175 °C MOSFET

• Synchronous rectification

• OR-ing

• Motor drive control

• Battery management