ICs
LF356 JFET Input Op-Amp IC
LF356 is an op-amp that has a JFET input. These JFET Op-amps are an excellent choice for low noise applications using High or Low source impedance. Having a JFET at the input side increases the bandwidth gain and reduces the input noise of the IC.
CD4049 Hex Buffer Converter (NOT Gate) IC
CD4049 Hex Buffer Converter (NOT Gate) IC is an inverting buffer IC consisting of 6 individual NOT gates present inside.
GMICP2731-10 GaN MMIC Power Amplifier for High RF Output and Signal Quality in Satellite Communications
Microchip Technology has introduced the new GMICP2731-10 Ka-band MMIC (Monolithic Microwave Integrated Circuit) power amplifier that is fabricated based on GaN-on-Silicon Carbide (SiC) technology.
EL817C Optocoupler/Phototransistor IC
EL817C IC is a popular optocoupler IC. The IC like any other optocoupler consists of an infrared emitting diode which is optically coupled to a phototransistor detector.
New Versatile AEM10330 & AEM30330 Buck-Boost PMICs for Energy Harvesting Applications
E-Peas has added two new versatile Buck-Boost ICs, AEM10330 and AEM30330 to its portfolio of advanced power management ICs (PMICs) for energy harvesting applications.
Compact BM2SC12xFP2-LBZ Power ICs with Built-In 1700V SiC MOSFET for Reducing Components Count and Time-to-Market
Intending to achieve higher efficiency and increased output power in a single surface-mounted TO263 7L package, ROHM has announced the BM2SC12xFP2-LBZ power ICs with integrated 1700V SiC MOSFET.
GaN Semiconductor Technology-based Low Noise Amplifiers for Robust Input Power Protection
Fairview Microwave has introduced the Gallium Nitride (GaN) semiconductor technology-based input protected Low Noise Amplifiers (LNAs) for providing robust input protection.
Integrated Converter-Inverter PFC Modules with Wide Switching Frequency in Transfer Molded Package for High Output Power Applications
ON-Semiconductors has introduced the NXH50M65L4C2SG and NXH50M65L4C2ESG, new integrated converter-inverter power factor correction (PFC) modules designed based upon standard aluminum oxide (AI2O3) substrate and enhanced low thermal resistance substrate, respectively