Onsemi Introduces New 1700V Silicon Carbide MOSFET and Schottky Diodes for Energy Infrastructure and Industrial Applications
Onsemi, recently revealed the name of its silicon carbide (SiC) family to be "EliteSiC". At the Consumer Electronics Show (CES) in Las Vegas, the company will showcase three new members of the family, including a 1700 V EliteSiC MOSFET (NTH4L028N170M1) and two 1700 V avalanche-rated EliteSiC Schottky diodes (NDSH25170A, NDSH10170A). These devices are designed for use in energy infrastructure and industrial drive applications, and demonstrate Onsemi's expertise in the field of industrial SiC solutions.
The 1700 V EliteSiC MOSFET is capable of providing higher breakdown voltage (BV) solutions, which are necessary for high-power industrial applications. The two avalanche-rated diodes allow for stable operation at high voltages and elevated temperatures, while also offering high efficiency thanks to their SiC construction. These new devices demonstrate superior performance and quality, and expand the range of solutions available in Onsemi's EliteSiC family.
Onsemi's end-to-end SiC manufacturing capabilities allow the company to meet the needs of industrial energy infrastructure and industrial drive providers. The new 1700 V EliteSiC MOSFET is particularly useful in renewable energy applications, where higher voltages are becoming more common. It offers a maximum Vgs range of -15 V/25 V, making it suitable for fast switching applications and providing increased reliability. The MOSFET also achieves a market-leading gate charge of 200 nC at a test condition of 1200V at 40Amps.