New SiC MOSFETs Enable Next-Generation EV/HEV Subsystems with Higher Efficiency and Power Density

28 June 2023 - 0 Comments

Diodes Incorporated introduced the automotive-compliant Silicon Carbide (SiC) MOSFETs DMWSH120H90SM4Q and DMWSH120H28SM4Q. These N-channel MOSFETs enhance the efficiency and power density of electric and hybrid-electric vehicle (EV/HEV) automotive subsystems, including battery chargers, on-board chargers (OBC), high-efficiency DC-DC converters, motor drivers, and traction inverters.

The DMWSH120H90SM4Q operates reliably and safely up to 1200VDS, with a gate-source voltage (Vgs) of +15/-4V. It boasts an RDS(ON) of 75mΩ (typical) at 15Vgs. This particular device is specifically designed for OBCs, automotive motor drivers, DC-DC converters in EV/HEV systems, and battery charging setups.

On the other hand, the DMWSH120H28SM4Q operates at up to 1200VDS with a +15/-4Vgs, featuring a lower RDS(ON) of 20 mΩ (typical) at 15Vgs. It is tailored for motor drivers, EV traction inverters, and DC-DC converters employed in other EV/HEV subsystems. The low RDS(ON) characteristic allows these MOSFETs to run cooler, thereby enhancing their performance in high power density applications.

Both products possess low thermal conductivity (RθJC=0.6°C/W), enabling drain currents of up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. Additionally, they are equipped with fast intrinsic and robust body diodes that exhibit low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. These features facilitate fast switching capabilities while reducing power losses.