Next-Gen CoolSiC 1200 V SiC Trench MOSFET with Optimized Chip Technology for OBC and DC-DC Applications
Infineon introduces its next generation of TO263-7-packaged 1200 V CoolSiCTM MOSFETs designed for automotive applications. In on-board charging (OBC) and DC-DC applications, these automotive-grade silicon carbide (SiC) MOSFETs offer high power density and efficiency, support bidirectional charging, and dramatically lower system costs.
The switching losses of the new generation of 1200 V CoolSiC MOSFETs are 25% lower than those of the older generation, enabling high-frequency operation and higher power densities with smaller system sizes. With a Gate-source threshold voltage (V GS(th)) above 4 V and an extremely low Crss/Ciss ratio, reliable turn-off at V GS = 0 V is achieved without the risk of unintended turn-ons. This makes unipolar driving possible while lowering system complexity and expenses.
These new MOSFETs also come with a low on-resistance (R DS(on)), which reduces conductive losses throughout the whole temperature range of -55°C to 175°C. The SiC MOSFETs' junction temperature reduces by 25% with the use of advanced diffusion soldering chip mount technology (XT technology) in the MOSFETs. Furthermore, the MOSFETs possess a creepage distance of 5.89 mm, meeting the requirements of 800 V systems and reducing the need for additional coatings.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- Commutation robust body diode, ready for synchronous rectification
- Temperature-independent turn-off switching losses
- Sense pin for optimized switching performance
- Suitable for HV creepage requirements
- XT interconnection technology
Applications
- On-board charger
- DC/DC converter
- Auxiliary drives
Availability
The AIMBG120R010M1 1200V CoolSiC™ MOSFET in TO263-7 package is now available.
