P55NF06 N-Channel Power MOSFET
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
Power MOSFET
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
IRF510 N-channel Power MOSFET
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 N-Channel Power MOSFET
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
IRF1405 N-Channel Power MOSFET
IRF1405 is a TO-220 N-channel MOSFET which has advanced features like fast switching speed and improved repetitive avalanche rating.
New OptiMOS Packages in TOLx Family Released for Improved TCoB Robustness and Superior Thermal Performance
Intended to offer more choice to power system designers, Infineon Technologies has introduced diverse design options that can offer maximum performance in the smallest space.
40V Low-Voltage Power MOSFET in PQFN Package with Greater Design Flexibility to Maximize System-Level Performance
To provide high power density levels and small form factors to maximize system-level performance to the contemporary power system designs, Infineon Technologies has come up with the
SiRA99DP - Low On-Resistance and Low Voltage Drop 30V P-channel Power MOSFET
The Vishay Intertechnology, Inc. has introduced the Siliconix TrenchFET Gen IV SiRA99DP, the first-ever 30V p-channel power MOSFET built to increase power density.
XK1R9F10QB – New 100V N-Channel Power MOSFET for Automotive Equipments
Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially fo
Industrial plating option with enhanced durability for a variety of harsh environments
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