IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
Intended to offer more choice to power system designers, Infineon Technologies has introduced diverse design options that can offer maximum performance in the smallest space.
To provide high power density levels and small form factors to maximize system-level performance to the contemporary power system designs, Infineon Technologies has come up with the
The Vishay Intertechnology, Inc. has introduced the Siliconix TrenchFET Gen IV SiRA99DP, the first-ever 30V p-channel power MOSFET built to increase power density.
Toshiba Electronic Devices & Storage Corporation has released XK1R9F10QB, a 100V N-Channel power MOSFET, mounted on a low-resistance TO-220SM (W) package. The device was designed especially fo
The FQD2N60C is a switching MOSFET from Fairchild Semiconductor that features a high breakdown voltage optimized for primary side switching in DC-DC converters.
The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.