Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications
STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-genera
Power MOSFET
New 80V Power MOSFET with Shield Gate Technology Optimized for Higher Switching Frequencies in Telecom and Server Power Supply
Alpha and Omega Semiconductor Limited has announced the release of 80V Power MOSFET with patented Shield Gate Technology that is optimized for higher switching frequencies used in telecom and server power supply.
FQP30N60L N-channel Power MOSFET
The FQP30N60L is an N-channel power MOSFET that features a moderate current carrying capability and a high drain-source breakdown voltage.
IRLZ34N N-Channel Power MOSFET
The N-channel high power MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistor) are popular for driving higher voltages and currents from a microcontroller.
New 40V/60V Dual Power MOSFETs with Low ON Resistance for Factory Automation Equipment and Industrial Applications
ROHM Semiconductor has introduced its 6th generation Nch+Pch MOSFETs that deliver the ±40V/±60V withstand voltage required for 24V input and are ideal for driving motors in base stations (cooling fans) and industrial applications such as factory automation equipment.
IRFP460 N-Channel Power MOSFET
The IRFP460 is an N-channel power MOSFET from Vishay, designed to provide the best combination of low on-resistance and fast switching. This is a high voltage device with a drain-source breakdown of 500V that comes in a TO-247 package.
P55NF06 N-Channel Power MOSFET
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
Arduino UNO Q bridges high-performance computing with real-time control.
Highest magnetic sensitivity, lowest power consumption, smaller size compared to Hall, AMR, and GMR
General-purpose thick-film, anti-sulfur resistors designed for long-term performance and reliability
0.45×0.25×0.2 mm series for compact designs. Auto-placement compatible for next‑gen electronics.
Maximum Power Connections for SWaP-C Optimization
Speed up the development of your analog input or sensor system with our wired connectivity solution
Versatile ABS boxes for IoT and electronic devices
Small size and low-height power relay for switching 480 VAC, 55 A.