The N-channel high power MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistor) are popular for driving higher voltages and currents from a microcontroller.
ROHM Semiconductor has introduced its 6th generation Nch+Pch MOSFETs that deliver the ±40V/±60V withstand voltage required for 24V input and are ideal for driving motors in base stations (cooling fans) and industrial applications such as factory automation equipment.
The IRFP460 is an N-channel power MOSFET from Vishay, designed to provide the best combination of low on-resistance and fast switching. This is a high voltage device with a drain-source breakdown of 500V that comes in a TO-247 package.
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.