IRF830 N-Channel Power MOSFET
The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
Pin Configuration
| 
			 Pin Number  | 
			
			 Pin Name  | 
			
			 Description  | 
		
| 
			 1  | 
			
			 Source  | 
			
			 Current flows out through Source (maximum 4.5A)  | 
		
| 
			 2  | 
			
			 Gate  | 
			
			 Controls the biasing of the MOSFET (Threshold voltage 10V)  | 
		
| 
			 3  | 
			
			 Drain  | 
			
			 Current flows in through Drain  | 
		
Features
- N-Channel Power MOSFET
 - Continuous Drain Current (ID): 4.5A
 - Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
 - Drain to Source Breakdown Voltage: 500V
 - Drain Source Resistance (RDS) is 1.5 Ohms
 - Rise time and fall time is 16nS and 16nS
 - Available in To-220 package
 
Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page
Alternatives for IRF830
8N50, FTK480, KF12N50
Other N-channel MOSFETS
IRF840, IRF740, BSS138, IRF520, 2N7002, BS170, BSS123, IRF3205, IRF1010E
About IRF830 MOSFET
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V with a drain current of 4.5A. If you need a relatively high current Mosfet you can check the IRF840. Both Mosfet has a gate threshold voltage of 10V across the Gate and Source pin with a on-state resistance of 1.5Ω. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.
One considerable disadvantage of the IRF830 Mosfet is its high on-resistance (RDS) value which is about 1.5 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.
Applications
- Switching high power devices
 - Inverter Circuits
 - DC-DC Converters
 - Control speed of motors
 - LED dimmers or flashers
 - High Speed switching applications
 
2D model of the component
If you are designing a PCB or Perf board with this component then the following picture from the IRF830 Datasheet will be useful to know its package type and dimensions.

  
    


