ROHM has introduced the new BD8758xY series of rail-to-rail input/output high-speed CMOS operational amplifiers that feature improved EMI immunity and low input bias current.
Intending to achieve higher efficiency and increased output power in a single surface-mounted TO263 7L package, ROHM has announced the BM2SC12xFP2-LBZ power ICs with integrated 1700V SiC MOSFET.
ROHM has introduced the highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.