High Efficiency MOSFETs with High Power Dissipation in Compact Package for Battery Operated Small, and Thin Devices
ROHM has recently developed a compact, high efficiency 20V Nch MOSFET, RA1C030LD, optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment.
RA1C030LD MOSFETs Features
- Low on-resistance
- High Power Small Package
- Polarity: N-channel
- Drain-Source Voltage: 20V
- Drain Current: 0.14A
- RDS(on) @ VGS=2.5V: 0.13V
- Power Dissipation: 1W
- Halogen Free
- ESD Protection up to 200V
The RA1C030LD is offered in the DSN1006-3 wafer-level, chip-size package (1.0mm × 0.6mm). In terms of the figure of merit that expresses the relationship between conduction and switching losses (ON-resistance × Qgd), an industry-leading value has been achieved that is 20% lower than standard package products in the same package (1.0mm × 0.6mm or smaller), contributing to a significantly smaller board area along with higher efficiency in a variety of compact devices. At the same time, ROHM’s unique package structure provides insulated protection for the side walls (unlike standard products in the same package with no protection). This reduces the risk of shorts due to contact between components in compact devices that must resort to high density mounting due to space constraints, contributing to safer operation.
RA1C030LD MOSFET Applications
- Hearables (i.e. wireless earbuds)
- Wearables such as smart watches, smart glasses, and action cameras
- Smartphones
Availability
The RA1C030LD MOSFETs are on sale from December 2022 with a price of $0.2/unit for samples (excluding tax). You can purchase directly from online distributors like Digi-key, Mouser, Farnell etc.
