GaN
ROHM Starts Mass Production of High-Performance 650V GaN HEMTs
ROHM has announced the mass production of two new Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), the GNP1070TC-Z and GNP1150TCA-Z.
Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz
Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
GMICP2731-10 GaN MMIC Power Amplifier for High RF Output and Signal Quality in Satellite Communications
Microchip Technology has introduced the new GMICP2731-10 Ka-band MMIC (Monolithic Microwave Integrated Circuit) power amplifier that is fabricated based on GaN-on-Silicon Carbide (SiC) technology.
GaN Semiconductor Technology-Based High Power RF and Microwave PIN Diodes for Aerospace and Military Applications
Fairview Microwave has released the new high-power broadband RF and microwave PIN diode series that utilizes GaN semiconductor technology for ensuring state-of-the-art power performance with an excellent power-to-volume ratio.
GaN Semiconductor Technology-based Low Noise Amplifiers for Robust Input Power Protection
Fairview Microwave has introduced the Gallium Nitride (GaN) semiconductor technology-based input protected Low Noise Amplifiers (LNAs) for providing robust input protection.