New MMICs and Discrete Transistors Deliver Performance Levels Required in 5G, Satellite Communication and Defense Applications
Microchip Technology Inc. has announced the expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with new MMICs and discrete transistors that combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications ranging from 5G to electronic warfare, satellite communications, commercial and defense radar systems and test equipment. Moreover, these devices are fabricated using GaN-on-silicon carbide technology that provides the best combination of high-power density and yield, along with high-voltage operation and longevity of more than 1 million hours at a 255˚C junction temperature.
These devices include GaN MMICs covering 2 to 18GHz, and 12 to 20GHz with 3dB Compression Point (P3dB) RF output power up to 20W and efficiency up to 25%, along with bare die and packaged GaN MMIC amplifiers for S- and X-band with up to 60% PAE, and discrete high electron mobility transistor (HEMT) devices covering DC to 14 GHz with P3dB RF output power up to 100W and maximum efficiency of 70%.
The power devices announced today include the ICP0349PP7-1-300I and ICP1543-1-110I, as well as other Microchip RF products, and are available in volume production.