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GaN FET

EPC2361 GaN FETs & EVAL-LT7930-AZ Buck-Boost Converter Design
EPC2361 GaN FETs & EVAL-LT7930-AZ Buck-Boost Converter Design

EPC GaN FETs Enable 4 kW High-Efficiency Buck-Boost Converter Reference Design

Efficient Power Conversion (EPC) EPC2361 GaN FETs enable Analog Devices' EVAL-LT7930-AZ, a 4 kW, 98.8% efficient buck-boost converter reference design for high-power applications.
Radiation-Hardened Plastic Portfolio
Radiation-Hardened Plastic Portfolio

New Radiation-Hardened Plastic Portfolio for MEO and GEO Applications

Renesas Electronics Corporation has launched a new line of plastic-packaged radiation-hardened devices for satellite power management systems.
EPC7014 GaN FET
EPC7014 High Switching Frequency Rad-Hard GaN Transistors

High Switching Frequency Rad-Hard GaN Transistors for Power Conversion Solution in Critical Spaceborne Applications

Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits.
GAN041-650WSB GaN FETs
GAN041-650WSB GaN FETs

650 V GaN FETs for Reducing Form Factor and Minimizing System Costs in 80 PLUS Titanium-Class Industrial Power Supplies

Nexperia has introduced its second-generation 650V power GaN FET device family with RDS(on) performance down to 35 mΩ (typical).