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High Switching Frequency Rad-Hard GaN Transistors for Power Conversion Solution in Critical Spaceborne Applications

EPC7014 High Switching Frequency Rad-Hard GaN Transistors

Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits. The new GaN-based devices offer breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance.


The lower resistance and the gate charge provide faster switching frequency, this delivers a higher power density, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. The tiny 0.81mm2 footprint eGaN FET has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2).


The new devices are suitable for use in power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles.


Feature of EPC7014 GaN FET

  • Ultra-high efficiency
  • Ultra-low gate charge
  • Ultra-small footprint
  • Lightweight
  • Total dose: Rated > 1 Mrad
  • Single event: SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown


Note: More technical information can be found in the EPC7014 Datasheet linked at the bottom of this page and on the EPC7014 GaN FET product page.

Component Datasheet

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