Power-Thru Isolated Gate Driver IC Delivers 2x the Power Density with a Simpler and More Efficient System Design

Allegro MicroSystems, Inc. has announced the launch of its new Power-Thru isolated gate driver AHV85110 that drives GaN FETs with up to a 50% smaller footprint and a 40% efficiency improvement compared to competitor offerings. This driver has fast propagation delay and high peak source/ sink capability to efficiently drive GaNFETs in high-frequency designs. High CMTI combined with isolated outputs for both bias power and drive make it ideal in applications requiring isolation, level-shifting, or ground separation for noise immunity.

An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

Features

• Transformer Isolation barrier

• Power-Thru integrated isolated bias

• AEC-Q100 Grade 2 qualification

• 50 ns propagation delay

• Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)

• Supply voltage 10.5 V < VDRV < 13.2 V

• Undervoltage lockout on primary VDRV and secondary VSEC

• Enable pin with fast response

• Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor

• CMTI > 100 V/ns dv/dt immunity

• Creepage distance 8.4 mm

• Safety Regulatory Approvals

Applications

• AC-DC and DC-DC converters: Totem-pole PFC, LLC half-/full-bridge, SR drive, multi-level converters, phase-shifted full-bridge

• Automotive: EV chargers, OBC

• Industrial: Data center, transportation, robotics, audio

• Clean Energy: Micro-inverters, string-inverters, solar