GeneSiC Semiconductors has introduced the industry-leading 1200V 3rd generation G3R SiC MOSFETs in the optimized low-inductance discrete packages (SMD and through-hole).
Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
Mitsubishi Electric Corporation has introduced its N-series 1200V SiC-MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) with low power loss and high tolerance to self
On Semiconductor expands its range of wide bandgap (WBG) devices with the introduction of the new 900V and 1200V family of silicon carbide (SiC) N-Channel MOSFET.